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SPP17N80C3 Datasheet
Datasheet specifications
| Datasheet's name | SPP17N80C3 |
|---|---|
| File size | 82.751 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet SPP17N80C3 |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies SPP17N80C3
- Power Dissipation (Pd): 208W
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 17A
- Gate Threshold Voltage (Vgs(th)@Id): 3.9V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 290mΩ@10V,11A
- Package: TO-220
- Manufacturer: Infineon Technologies